| PART |
Description |
Maker |
| MGFS45V2527 |
2.5 - 2.7GHz BAND 30W INTERNALLY MATCHD GaAs FET 2.5 - 2.7GHz频带功率30W国内MATCHD砷化镓场效应
2.5-2.7GHz BAND 30W INTERNALLY MATCHD GaAs FET
|
Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| EIA1718-1P |
17.7-18.7GHz, 1W Internally Matched Power FET
|
Excelics Semiconductor, Inc.
|
| EIA1819-1P EIB1819-1P |
18.7-19.7GHz, 1W Internally Matched Power FET
|
Excelics Semiconductor, Inc.
|
| MGFC40V7177B |
7.1 - 7.7GHz BAND 10W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
|
| RFPA1702PCBA-410 RFPA1702S2 RFPA1702SB RFPA1702SQ |
17.7GHz TO 19.7GHz HIGH LINEARITY POWER AMPLIFIER
|
RF Micro Devices
|
| TIM1011-15L |
P1dB=42.0dBm at 10.7GHz to 11.7GHz
|
Toshiba Corporation
|
| SY87724L SY87724LH1 |
3.3V AnyRateTM MUX/DEMUX Up to 2.7GHz
From old datasheet system
3.3V AnyRate MUX/DEMUX Up to 2.7GHz
|
MICREL[Micrel Semiconductor]
Micrel Semiconductor,Inc.
|
| PAT-10 PAT-15 PAT-20 PAT-3 PAT-6 |
DC to 7GHz
|
Mini-Circuits
|
| SZM-2166Z SZM-2166Z-EVB1 SZM-2166Z-EVB2 SZM-2166Z- |
2.3-2.7GHz 2W Power Amplifier
|
SIRENZA MICRODEVICES
|
| SZM-2066Z |
2.4-2.7GHz 2W Power Amplifier
|
http://
Sirenza Microdevices, Inc
|
